型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
---|---|---|---|---|---|---|---|---|
HYG030N03LQ1C2 | MOS(场效应管) |
HUAYI/华羿微 |
DFN56 |
25+ |
100000 |
|||
NCP3232NMNTXG | IC |
ONSEMI/安森美 |
QFN40 |
2235+ |
135000 |
|||
AOD408 | MOS(场效应管) |
AOS/万代 |
TO-252 |
2430+ |
75000 |
|||
PI4GTL2014LEX | IC |
DIODES/美台 |
TSSOP14 |
2245+ |
30000 |
|||
AOD442 | MOS(场效应管) |
AOS/万代 |
TO-252 |
2430+ |
75000 |
|||
LD1117DT12TR | MOS(场效应管) |
ST/意法 |
TO-252 |
2430+ |
52000 |
|||
L78M05CDT-TR | MOS(场效应管) |
ST/意法 |
TO-252 |
2121+ |
550000 |
|||
AOD480 | MOS(场效应管) |
AOS/万代 |
TO-252 |
2430+ |
75000 |
|||
NCE07TD60BF | MOS(场效应管) |
NCE/新洁能 |
TO-220 |
25+ |
50000 |
|||
HYG025N04NA1C2 | MOS(场效应管) |
HUAYI/华羿微 |
DFN56 |
25+ |
50000 |
|||
HYG015N10NS1TA | MOS(场效应管) |
HUAYI/华羿微 |
TOLL |
2430+ |
15000 |
|||
AON6522 | MOS(场效应管) |
AOS/万代 |
DFN56 |
2430+ |
36000 |
|||
BSP125H6327 | MOS(场效应管) |
INFINEON/英飞凌 |
SOT-223 |
1921+ |
12500 |
|||
AOD472 | MOS(场效应管) |
AOS/万代 |
TO-252 |
2430+ |
75000 |
|||
STN9360 | MOS(场效应管) |
ST/意法 |
SOT-223 |
2430+ |
88000 |
|||
HY3506P | MOS(场效应管) |
HUAYI/华羿微 |
TO-220 |
25+ |
50000 |
|||
HYG015N04NS1C2 | HUAYI/华羿微 |
DFN56 |
2430+ |
50000 |
||||
CJU50N06A | CJ/长晶 |
TO-252 |
2430+ |
56000 |
||||
CJX3134K | CJ/长晶 |
SOT-563 |
2430+ |
56000 |
||||
BTA208S-600F | NXP/WEEN |
TO-252 |
2430+ |
4469 |
商家默认展示20条库存